IBM Develops New Nano HKMG Platform
The semiconductor technology alliance comprised of industry giants IBM, Samsung Electronics, Infineon Technologies, Global Foundries, Chartered Semiconductor Manufacturing, and STMicroelectronics have just announced the continuation of their cooperative efforts in the development of efficient and cost-effective semiconductor process technologies. The alliance’s current project involves the development of a semiconductor platform revolving around a 28-nanometer high-k (high dielectric constant) metal oxide gate or HKMG.
Until very recently, silicon dioxide has been the preferred oxide gate in semiconductor processes. However, as the demand for slimmer, lighter, smaller and more power-efficient electronic devices went up, silicon dioxide became less and less ideal.
The IBM technology Alliance, as the semi-conductor cabal is informally known, is one of the technology groups that have been established in response to the demand for better semiconductor processing technologies. The IBM Technology Alliance has already been successful in designing and commercially deploying a 32-nm HKMG semiconductor platform. It is hoped that their current 28-nm HKMG platform will meet with the same level of success.